丝印：NVHL065N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：832.18 Kbytes 页数：10 Pages

ONSEMI

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丝印：NVHL065N65S3F；Package：TO-247-4LD；MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：832.18 Kbytes 页数：10 Pages

ONSEMI

安森美半导体