丝印：NVMTS1D2N08H；Package：POWER88；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 337 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NVMTS1D2N08H；Package：POWER88；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 337 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体