丝印：NVB260N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

文件：333.3 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NVB260N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

文件：333.3 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.91 Kbytes 页数：2 Pages

ISC

无锡固电