丝印：NVBLS1D1N08H；Package：M0-299A；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 m, 351 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV

文件：424.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NVBLS1D1N08H；Package：M0-299A；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 m, 351 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV

文件：424.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体