N?묬hannel Power MOSFET

文件：148.35 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati

文件：169.3 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati

文件：169.3 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati

文件：169.3 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体