N?묬hannel Enhancement?묺ode TO??20

N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail

文件：164 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220

Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters

文件：354.04 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N−Channel Enhancement−Mode TO−220

ONSEMI

安森美半导体

StarMOST Power MOSFET

文件：201.59 Kbytes 页数：2 Pages

Good-Ark

固锝电子

N-Channel 200 V (D-S) MOSFET

文件：1.58708 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

文件：392.22 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体