General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati

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Fairchild

仙童半导体

IGBT 400V 45W IPAK

ONSEMI

安森美半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 45W IPAK

ONSEMI

安森美半导体

15A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

文件：220.24 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：211.09 Kbytes 页数：5 Pages

UTC

友顺

N-Channel Enhancement Mode MOSFET

文件：256.149 Kbytes 页数：4 Pages

DACO

罡境电子