Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 19 A, 165 mΩ, TO-220

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 35 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 326 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching l;

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丝印：T165N65S3H；Package：TO-220-3LD；MOSFET - Power, N?륝hannel, SUPERFET III, FAST

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 165 m, 19 A

文件：218.77 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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