isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.77 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：FCP165N65S3R0；Package：TO-220-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m

文件：392.96 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，19 A，165 mΩ，TO-220

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swit • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 39 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)\n• Lower switching loss\n• Internal Gate Resistance: 4.6 Ω\n• Lower peak Vds and lower Vgs;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.01 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swit • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)\n• Low switching loss\n• Ultra Low Gate Charge (Typ. Qg = 39 nC)\n• Low switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n;

ONSEMI

安森美半导体