丝印：FCP165N65S3R0；Package：TO-220-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m

文件：392.96 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCP165N65S3R0；Package：TO-220-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m

文件：392.96 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.01 Kbytes 页数：2 Pages

ISC

无锡固电