| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=4.3mMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=4.3mMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=4.3mMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.95mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.95mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.95mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedf | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedf | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedf | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Designedforautomotiveapplicationa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.85mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Designedforautomotiveapplicationa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
询价 | ||
NEC |
08+(pbfree) |
TO-251 |
8866 |
询价 | |||
NEC |
23+ |
TO-251 |
12277 |
全新原装 |
询价 | ||
23+ |
N/A |
46280 |
正品授权货源可靠 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-251 |
询价 | ||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
R |
23+ |
TO263 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
JINGDAO/晶导微 |
23+ |
SOD-123 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
R |
23+ |
TO263 |
10000 |
公司只做原装正品 |
询价 | ||
R |
23+ |
TO263 |
6000 |
原装正品，支持实单 |
询价 |
相关规格书
更多- NP60N04HLF_15
- NP60N04KUG
- NP60N04KUG-E1-AY
- NP60N04MUG_15
- NP60N04MUK
- NP60N04MUK_15
- NP60N04NUK
- NP60N04PDK
- NP60N04PDK-E1-AY
- NP60N04VDK
- NP60N04VDK-E1-AY
- NP60N04VDK-E2-AY
- NP60N04VLK
- NP60N04VLK_V01
- NP60N04VLK-E1-AY
- NP60N04VLK-E2-AY
- NP60N04VUK
- NP60N04VUK_V01
- NP60N04VUK-E1-AY
- NP60N04VUK-E2-AY
- NP60N055KUG_15
- NP60N055MUK
- NP60N055MUK_15
- NP60N055NUK
- NP60N055VUK
- NP60N055VUK
- NP60N055VUK_V01
- NP60N055VUK-E1-AY
- NP60N055VUK-E2-AY
- NP60N06MLK
- NP60N06MLK-S18-AY
- NP60N06PDK
- NP60N06PDK_V01
- NP60N06PDK-E1-AY
- NP60N06PDK-E2-AY
- NP60N06PLK
- NP60N06PLK-E1-AY
- NP60N06PLK-E2-AY
- NP60N06VDK
- NP60N06VDK_V01
- NP60N06VDK-E1-AY
- NP60N06VDK-E2-AY
- NP60N06VDK-E2-AY
- NP60N06VLK
- NP60N06VLK-E1-AY
相关库存
更多- NP60N04ILF
- NP60N04KUG_15
- NP60N04MUG
- NP60N04MUK
- NP60N04MUK
- NP60N04MUK-S18-AY
- NP60N04NUK-S18-AY
- NP60N04PDK_15
- NP60N04PDK-E2-AY
- NP60N04VDK_15
- NP60N04VDK-E1-AY
- NP60N04VDK-E2-AY
- NP60N04VLK
- NP60N04VLK-E1-AY
- NP60N04VLK-E2-AY
- NP60N04VUK
- NP60N04VUK_15
- NP60N04VUK-E1-AY
- NP60N04VUK-E2-AY
- NP60N055KUG
- NP60N055MUK
- NP60N055MUK
- NP60N055MUK-S18-AY
- NP60N055NUK-S18-AY
- NP60N055VUK
- NP60N055VUK_15
- NP60N055VUK-E1-AY
- NP60N055VUK-E2-AY
- NP60N06MLK
- NP60N06MLK_V01
- NP60N06MLK-S18-AY
- NP60N06PDK
- NP60N06PDK-E1-AY
- NP60N06PDK-E2-AY
- NP60N06PLK
- NP60N06PLK_V01
- NP60N06PLK-E1-AY
- NP60N06PLK-E2-AY
- NP60N06VDK
- NP60N06VDK-E1-AY
- NP60N06VDK-E1-AY
- NP60N06VDK-E2-AY
- NP60N06VLK
- NP60N06VLK_V01
- NP60N06VLK-E1-AY
