isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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Product Scout Automotive

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MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

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Nch Single Power MOSFET 40V 60A 4.3mohm MP-25SK/TO-262 Automotive

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)\n• Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified;

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