MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

文件：111.76 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.05 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.59039 Mbytes 页数：5 Pages

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杜因特

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

文件：111.76 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

文件：123.3 Kbytes 页数：8 Pages

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Nch Single Power MOSFET 40V 60A 4.3mohm MP-25K/TO-220 Automotive

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)\n• Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified;

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