MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04HLF and NP60N04ILF are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS =

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

SWITCHING N-CHANNEL POWER MOS FET

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SWITCHING N-CHANNEL POWER MOS FET

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