MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) ● Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) ● Designed for automotive application

文件：112.6 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：994.73 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) ● Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) ● Designed for automotive application

文件：112.6 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

文件：124.14 Kbytes 页数：8 Pages

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Nch Single Power MOSFET 55V 60A 6.0mohm MP-25K/TO-220 Automotive

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)\n• Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified;

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