60 V – 60 A – N-channel Power MOS FET Application: Automotive

Description NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)  Designed for automotive application and

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瑞萨

南麟
SOP-8

南麟

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Amphenol Advanced Sensors
14-SOIC 模块

Amphenol Advanced Sensors

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Amphenol Advanced Sensors
14-SMD 模块

Amphenol Advanced Sensors

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SULLINS
BULK

SULLINS

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