SWITCHING P-CHANNEL POWER MOS FET

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RENESAS

瑞萨

-60V – -50A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A )  Low input capacitance : Ciss = 50

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

文件：184.9 Kbytes 页数：7 Pages

NEC

瑞萨

SOP-8

南麟

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14-SOIC 模块

Amphenol Advanced Sensors

上传：深圳市汇创佳电子科技有限公司