MOS FIELD EFFECT TRANSISTOR

Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Des

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2

文件：239.31 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

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VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

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MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

文件：255.69 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

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Satellite Zero IF QPSK Tuner IC

Description The SL1925 is a wideband quadrature converter operating from 950 to 2150 MHz, intended primarily for application in satellite tuners. The device contains all elements necessary, with the exception of local oscillator sustaining network, to fabricate a high performance I(n-phase) &

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MITEL