MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low C

文件：295.45 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 39mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.67 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in

文件：84.08 Kbytes 页数：8 Pages

NEC

瑞萨

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

文件：960.11 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.43 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)

文件：297.3 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 39mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.29 Kbytes 页数：2 Pages

ISC

无锡固电