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NP22N055IHE	文件：298.29 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055ILE	文件：297.3 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055ILE	文件：298.06 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055SHE	文件：295.45 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SHE	文件：298.31 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055SLE	文件：297.3 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SLE	文件：298.06 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP23N06YDG	文件：226.04 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP23N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=27mΩMAX.(VGS=10V,ID=11.5A) •LowCiss:Ciss=1200pFTYP.(VDS=25V,VGS=0V) •Logicleveldrivetype •Des	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP23N06YDG-E1-AY	文件：226.04 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP23N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=27mΩMAX.(VGS=10V,ID=11.5A) •LowCiss:Ciss=1200pFTYP.(VDS=25V,VGS=0V) •Logicleveldrivetype •Des	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP23N06YDG-E2-AY	文件：226.04 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP23N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=27mΩMAX.(VGS=10V,ID=11.5A) •LowCiss:Ciss=1200pFTYP.(VDS=25V,VGS=0V) •Logicleveldrivetype •Des	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP24N10CLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP24N10DLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP24N10ELB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP28N10SDE	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) •LowCiss:Ciss=2200pFTYP.(VDS=2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP28N10SDE	文件：984.08 Kbytes Page：8 Pages	N-Channel 100-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
NP28N10SDE	文件：299.4 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP28N10SDE-E1-AY	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) •LowCiss:Ciss=2200pFTYP.(VDS=2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP28N10SDE-E2-AY	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) •LowCiss:Ciss=2200pFTYP.(VDS=2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP2S	文件：524.47 Kbytes Page：20 Pages	Satellite Zero IF QPSK Tuner IC Description TheSL1925isawidebandquadratureconverteroperatingfrom950to2150MHz,intendedprimarilyforapplicationinsatellitetuners. Thedevicecontainsallelementsnecessary,withtheexceptionoflocaloscillatorsustainingnetwork,tofabricateahighperformanceI(n-phase)&	Mitel Mitel Corporation	Mitel
NP2T	文件：524.47 Kbytes Page：20 Pages	Satellite Zero IF QPSK Tuner IC Description TheSL1925isawidebandquadratureconverteroperatingfrom950to2150MHz,intendedprimarilyforapplicationinsatellitetuners. Thedevicecontainsallelementsnecessary,withtheexceptionoflocaloscillatorsustainingnetwork,tofabricateahighperformanceI(n-phase)&	Mitel Mitel Corporation	Mitel

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详细参数

型号：
NP2
制造商：
Hubbell Premise Wiring
功能描述：
WALLPLATE, 2-G, 2) TOGG, BR
制造商：
Hubbell Wiring Device-Kellems

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	NP2802	Radiant	22+	TQFP/80	2978	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市益百分电子有限公司	NP2803	ROCKWELL	00+	QFP80	1350	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	NP2511B-1PQ		00+	QFP-128P	28	现货	询价
深圳市深创辉科技有限公司	NP2300SCT3G	ON	11+		2500	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市勤思达科技有限公司	NP22N055SLE-E1	NEC	1415+	TO-252	28500	全新原装正品,优势热卖	询价
深圳市毅创腾电子科技有限公司	NP2802	RADIANT	23+	TQFP-80	550	专营高频管模块,全新原装!	询价
深圳市凯斯宇科技有限公司	NP20P06SLG-E1-AY	RENESAS	2022	TO252	40	原厂原装正品,价格超越代理	询价
深圳市欧立现代科技有限公司	NP2803	Radiant	22+	TQFP	6980	原装现货,可开13%税票	询价
深圳市凌旭科技有限公司	NP23N06YDG-E2-AY	RENESAS	2016+	QFN8	2742	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市博浩通科技有限公司	NP2P7447-010	进口原装	23+	BGA	1008	优势库存	询价

更多NP2供应商更新时间2024-6-14 16:21:00

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