| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NP2 | Packing List Envelopes | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | |
NP2 | TO220 35W HIGH POWER RESISTORS | DBLECTRODB Lectro Inc 迪贝电子迪贝电子（上海）有限公司 | DBLECTRO | |
-40V – -20A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=25mMax.(VGS=-10V,ID=-10A) RDS(on)=38mMax.(VGS=-4.5V,ID=-10A) Lowinputcapacitance:Ciss=16 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
-40V – -20A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=25mMax.(VGS=-10V,ID=-10A) RDS(on)=38mMax.(VGS=-4.5V,ID=-10A) Lowinputcapacitance:Ciss=16 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=47mMAX.(VGS=–10V,ID=–10A) RDS(on)=64mMAX.(VGS=–5V,ID=–10A) RDS(on)=70mMAX.(VGS=–4.5V,ID=–10A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=47mMAX.(VGS=–10V,ID=–10A) RDS(on)=64mMAX.(VGS=–5V,ID=–10A) RDS(on)=70mMAX.(VGS=–4.5V,ID=–10A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=47mMAX.(VGS=–10V,ID=–10A) RDS(on)=64mMAX.(VGS=–5V,ID=–10A) RDS(on)=70mMAX.(VGS=–4.5V,ID=–10A | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowCiss:Ciss=590pFTYP. •Built-in | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
N-Channel 60 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowCiss:Ciss=590pFTYP. •Built-in | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
NP2
- 制造商：
Hubbell Premise Wiring
- 功能描述：
WALLPLATE, 2-G, 2) TOGG, BR
- 制造商：
Hubbell Wiring Device-Kellems
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Radiant |
22+ |
TQFP/80 |
2978 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
ROCKWELL |
00+ |
QFP80 |
1350 |
全新原装进口自己库存优势 |
询价 | ||
00+ |
QFP-128P |
28 |
现货 |
询价 | |||
ON |
11+ |
2500 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
NEC |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
RADIANT |
23+ |
TQFP-80 |
550 |
专营高频管模块,全新原装! |
询价 | ||
RENESAS |
2022 |
TO252 |
40 |
原厂原装正品,价格超越代理 |
询价 | ||
RENESAS |
2017+ |
HSON8 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
Radiant |
22+ |
TQFP |
6980 |
原装现货,可开13%税票 |
询价 | ||
RENESAS |
2016+ |
QFN8 |
2742 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
相关规格书
更多- NP2.3-12
- NP2-12
- NP22N055-SLE-E1-AZ
- NP24-12BFR
- NP26
- NP262I
- NP26BK
- NP26R
- NP2C/B
- NP2CM-B
- NP2I
- NP2RX
- NP2RX-B
- NP2RX-B-D
- NP2RX-POS
- NP2RX-TIMBRE
- NP2RX-ULTIMATE
- NP2X-AU-SILENT
- NP2X-BAG
- NP2X-POS
- NP33N06YDG-E1-AY
- NP3-6
- NP36P06SLG-E1-AY
- NP3C/B
- NP3CM-B
- NP3M-H
- NP3RX-B
- NP3TB-B
- NP3TM-B
- NP3TT-P-B
- NP3X
- NP3X-BAG
- NP3X-POS
- NP4-6
- NP50P06KDG-E1-AY-CUTTAPE
- NP5-6
- NP60N055KUG-E1-AY
- NP7
- NP7-12
- NP74N04YUG-E1-AY
- NP75P03YDG-E1-AY
- NP826I
- NP82I
- NP82R
- NP8E2D203QE
相关库存
更多- NP2.3-12FR
- NP-21-BK
- NP-23
- NP-25K
- NP262GY
- NP262W
- NP26GY
- NP2C
- NP2CBAG
- NP2GY
- NP2RC
- NP2RX-AU-SILENT
- NP2RX-BAG
- NP2RX-L-D
- NP2RX-SILENT-POS
- NP2RX-TIMBRE-POS
- NP2X
- NP2X-B
- NP2XL
- NP2X-WT
- NP35N04YUG-E1-AY
- NP36P04SDG-E1-AY
- NP3C
- NP3CBAG
- NP3F-H
- NP3RX
- NP3RX-BAG
- NP3TB-R
- NP3TT-2
- NP3TT-P-R
- NP3X-B
- NP3XL
- NP4
- NP50P04SDG-E1-AY-CUTTAPE
- NP5-12
- NP60N03KUG-E1-AZ
- NP65-12BFR
- NP70N10KUF-E1-AY-CUTTAPE
- NP7-12TFR
- NP75N04YUG-E1-AY
- NP7-6
- NP82GY
- NP82N055PUG-E1-AY-CUTTAPE
- NP82W
- NP8GY
