MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2

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