PJP24N10资料使用说明书贸易商強茂Panjit-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PJP24N10	文件：190.85 Kbytes Page：5 Pages	100V N-Channel Enhancement Mode MOSFET 文件：190.85 Kbytes 页数：5 Pages	PANJIT 強茂	PANJIT
PJP24N10	文件：300 bytes Page：1 Pages	100V N-Channel Enhancement Mode MOSFET	Panjit 強茂	Panjit
EPC24N10A	文件：155.71 Kbytes Page：5 Pages	Up to 110A 460 Vac Phase Angle Controller 文件：155.71 Kbytes 页数：5 Pages	TELEDYNE 华特力科	TELEDYNE
NP24N10CLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 文件：239.31 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NP24N10DLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 文件：239.31 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

更多PJP24N10供应商更新时间2025-12-10 15:06:00