NP100P06PDG-E1-AYNOTE数据手册行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP100P06PDG-E1-AYNote	文件：300.42 Kbytes Page：9 Pages	SWITCHING P-CHANNEL POWER MOS FET 文件：300.42 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NP100P06PDG-E1-AY	文件：1.35852 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PDG-E1-AY	文件：191.09 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP1216DR	文件：0 bytes Page：0 Pages	南麟 DFN2*2-6	南麟上传：深圳市勇康微科技有限公司	南麟
NP2300MR-Y-G	文件：0 bytes Page：0 Pages	NATLINEAR/南麟 SOT23-3	NATLINEAR/南麟上传：深圳广友电子有限公司	NATLINEAR/南麟

更多NP100P06PDG-E1-AYNOTE供应商更新时间2025-10-11 11:07:00