NP110N04PUK-E2-AY数据表ic资料供应价格-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP110N04PUK-E2-AY	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 1.4 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive applicatio 文件：113.76 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP110N04PUK-E2-AY	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V)  Designed for automotive application 文件：271.53 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP1216DR	文件：0 bytes Page：0 Pages	DFN2*2-6	南麟上传：深圳市勇康微科技有限公司	南麟
NP2300MR-Y-G	文件：0 bytes Page：0 Pages	SOT23-3	NATLINEAR/南麟上传：深圳广友电子有限公司	NATLINEAR/南麟
NP2301AMR	文件：0 bytes Page：0 Pages	SOT-23-3	南麟上传：深圳市勇康微科技有限公司	南麟

更多NP110N04PUK-E2-AY供应商更新时间2026-2-6 15:30:00