NE555资料datasheet下载行情报价瑞萨第6页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NE5550279A-T1	文件：470.92 Kbytes Page：9 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin 文件：470.92 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5550279A-T1A	文件：470.92 Kbytes Page：9 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin 文件：470.92 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NE5550779A	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550779A-A	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550779A-T1	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550779A-T1A	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550779A-T1-A	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550779A-T1A-A	文件：3.20669 Mbytes Page：17 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f 文件：3.20669 Mbytes 页数：17 Pages	RENESAS 瑞萨	RENESAS
NE5550979A	文件：438.95 Kbytes Page：10 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 文件：438.95 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NE5550979A-T1	文件：438.95 Kbytes Page：10 Pages	Silicon Power LDMOS FET FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 文件：438.95 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Maximum Output Rise Time：
300 ns
Supply Current @ VCC = 5V (Output Low)：
3 mA
Supply Current @ VCC = 5V (Output High)：
2 mA
VCC Min：
4.5 V
VCC Max：
16 V
Operating Ambient Temperature Range：
0 to 70 °C
Packages：
SO-8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星宇佳科技有限公司	NE555	HLF	21+	DIP	12500	一级代理大量现货	询价
深圳市宝芯创电子有限公司	NE555	TI	13+	DIP-8	20302	原装正品现货热销中,价格优惠,可出售样品!支持省内代	询价
深圳市龙瀚电子有限公司	NE555	KW	11+	DIP-8	62000	原装正品现货优势18	询价
深圳市坤融电子科技有限公司	NE555		24+	SOP-14	6000	美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现	询价
深圳市得捷芯城科技有限公司	NE555	TI(德州仪器)	24+	标准封装	8048	原厂直销,大量现货库存,交期快。价格优,支持账期	询价
中天科工半导体（深圳）有限公司	NE555	TI/德州仪器	25+	标准	39817	TI/德州仪器原装特价NE555即刻询购立享优惠#长期有货	询价
深圳市星佑电子有限公司	NE555	ON	07+	SOT-23	1256	全新原装绝对自己公司现货	询价
深圳市鑫洋微电子科技有限公司	NE555	TI	15+	SOP-8	100000	低价热卖!现货供应,专业为客户提供一站式服务。	询价
深圳市鸿昌盛电子科技有限公司	NE555		2015+		20	公司现货库存	询价
深圳市亿智腾科技有限公司	NE555	PHI	24+	SOP	3580	原装现货/15年行业经验欢迎询价	询价

更多NE555供应商更新时间2025-10-4 9:30:00

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