首页 >NE5550779A>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NE5550779A | Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NE5550779A | Silicon Power LDMOS FET | CEL California Eastern Laboratories |  | |
Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon Power LDMOS FET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | ||
Silicon Power LDMOS FET | CEL California Eastern Laboratories | | ||
Silicon Power LDMOS FET | CEL California Eastern Laboratories | | ||
Silicon Power LDMOS FET | CEL California Eastern Laboratories | | ||
Silicon Power LDMOS FET | CEL California Eastern Laboratories | | ||
Silicon Power LDMOS FET | CEL California Eastern Laboratories | | ||
包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD EVAL NPN MED PWR TRANS | CEL California Eastern Laboratories | | ||
包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD EVAL NPN MED PWR TRANS | CEL California Eastern Laboratories | | ||
包装：托盘 封装/外壳：4-SMD，扁平引线 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 30V 900MHZ 79A-PKG | CEL California Eastern Laboratories | |
详细参数
- 型号：
NE5550779A
- 制造商：
California Eastern Laboratories(CEL)
- 功能描述：
SILICON POWER LDMOS FET ROHS COMPLIANT - Product that comes on tape, but is not reeled
- 功能描述：
IC FET LDMOS 30V 0.6A 79A-PKG
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
20+ |
射频元件 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
RENESAS/瑞萨 |
12+ |
45000 |
一周左右货期全新进口原装 |
询价 | |||
CEL |
22+ |
79A |
9000 |
原厂渠道,现货配单 |
询价 | ||
RENESAS/瑞萨 |
26261 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
CEL |
23+ |
79A |
9000 |
原装正品，支持实单 |
询价 | ||
CEL |
2022+ |
79A |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS(瑞萨)/IDT |
20+ |
- |
5000 |
询价 | |||
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
Renesas |
2年内 |
N/A |
16000 |
英博尔原装优质现货订货渠道商 |
询价 | ||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
询价 |
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