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NE5550979A

Silicon Power LDMOS FET

FEATURES •HighOutputPower:Pout=39.5dBmTYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22dBTYP.(VDS=7.5V,IDset=200mA,f=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

NE5550979A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1

Silicon Power LDMOS FET

FEATURES •HighOutputPower:Pout=39.5dBmTYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22dBTYP.(VDS=7.5V,IDset=200mA,f=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1A

Silicon Power LDMOS FET

FEATURES •HighOutputPower:Pout=39.5dBmTYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=200mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22dBTYP.(VDS=7.5V,IDset=200mA,f=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A_13

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A_15

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-A

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

NE5550979A-T1

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

NE5550979A-T1A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1A

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

NE5550979A-T1-A

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

NE5550979A-T1-A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1A-A

Silicon Power LDMOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NE5550979A-T1A-A

Silicon Power LDMOS FET

CEL

California Eastern Laboratories

CEL

详细参数

  • 型号:

    NE5550979A

  • 制造商:

    California Eastern Laboratories(CEL)

  • 功能描述:

    SILICON MEDIUM POWER LDMOSFET ROHS DIRECTIVE COMPLIANT - Product that comes on tape, but is not reeled

  • 功能描述:

    IC FET LDMOS 30V 3.0A 79A-PKG

  • 功能描述:

    Pout 39.5dBm PAE 66% Gain 22dB

供应商型号品牌批号封装库存备注价格
RENESAS
NA
6784
正品原装--自家现货-实单可谈
询价
RENESAS
2017+
NA
22556
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
Renesas
23+
NA
10658
专业电子元器件供应链正迈科技特价代理QQ1304306553
询价
RENESAS
2018+
NA
30617
一级代理全新原装热卖
询价
23+
N/A
48700
正品授权货源可靠
询价
CEL
20+
射频元件
3000
就找我吧!--邀您体验愉快问购元件!
询价
RENESAS/瑞萨
79A
265209
假一罚十原包原标签常备现货!
询价
RENESAS
22+
高频管
28600
只做原装正品现货假一赔十一级代理
询价
RENESAS/瑞萨
23+
79A
50000
全新原装正品现货,支持订货
询价
RENESAS
21+
CAN
50000
全新原装正品现货,支持订货
询价
更多NE5550979A供应商 更新时间2024-4-27 16:20:00