NE6510179A-T1数据表ic资料库存现货瑞萨-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业
NE6510179A-T1	文件：285.94 Kbytes Page：10 Pages	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5	CEL California Eastern Laboratories
NE6510179A-T1	文件：207.76 Kbytes Page：11 Pages	N-CHANNEL GaAs HJ-FET 1WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE6510179Aisa1WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering1Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdist	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NE6510179A-T1-A	文件：285.94 Kbytes Page：10 Pages	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET DESCRIPTION NECsNE6510179AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering1.8wattsofoutputpower(C/W)at3.5Vand3Wattsofouptutpower(CW)at5	CEL California Eastern Laboratories
NE6510179A-T1-A	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：4-SMD，扁平引线类别：分立半导体产品晶体管 - FET，MOSFET - 射频描述：FET RF 8V 1.9GHZ 79A	CEL California Eastern Laboratories

更多NE6510179A-T1供应商更新时间2024-4-27 15:35:00