3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

文件：351.15 Kbytes 页数：8 Pages

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SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

文件：290.22 Kbytes 页数：11 Pages

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丝印：A2；Package：79A；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

文件：290.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：A2；Package：79A；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

文件：290.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

文件：351.15 Kbytes 页数：8 Pages

CEL

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

文件：295.84 Kbytes 页数：13 Pages

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瑞萨

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

文件：390.12 Kbytes 页数：9 Pages

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丝印：A3；Package：79A；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

文件：295.84 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：A3；Package：79A；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

文件：295.84 Kbytes 页数：13 Pages

RENESAS

瑞萨

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

文件：390.12 Kbytes 页数：9 Pages

CEL