LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

文件：69.43 Kbytes 页数：5 Pages

PHI

PHI

LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

文件：69.43 Kbytes 页数：5 Pages

PHI

PHI

LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

文件：69.43 Kbytes 页数：5 Pages

PHI

PHI

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：291.9 Kbytes 页数：11 Pages

RENESAS

瑞萨

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：291.9 Kbytes 页数：11 Pages

RENESAS

瑞萨

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：291.9 Kbytes 页数：11 Pages

RENESAS

瑞萨

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

文件：290.69 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：AU；Package：79A；SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

文件：290.69 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：AU；Package：79A；SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

文件：290.69 Kbytes 页数：11 Pages

RENESAS

瑞萨

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件：166.31 Kbytes 页数：7 Pages

NEC

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