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NE5520279A-T1

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件:166.31 Kbytes 页数:7 Pages

NEC

瑞萨

NE552R479A

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

文件:495.06 Kbytes 页数:9 Pages

CEL

NE552R479A

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件:605.16 Kbytes 页数:7 Pages

CEL

NE552R479A-T1

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件:605.16 Kbytes 页数:7 Pages

CEL

NE552R479A-T1A

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件:605.16 Kbytes 页数:7 Pages

CEL

NE552R479A-T1-A

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件:605.16 Kbytes 页数:7 Pages

CEL

NE552R479A-T1A-A

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

文件:495.06 Kbytes 页数:9 Pages

CEL

NE552R679A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件:68.5 Kbytes 页数:9 Pages

NEC

瑞萨

NE552R679A-T1

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件:68.5 Kbytes 页数:9 Pages

NEC

瑞萨

NE552R679A-T1A

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件:68.5 Kbytes 页数:9 Pages

NEC

瑞萨

详细参数

  • 型号:

    NE552

  • 功能描述:

    LVDT Conditioner

供应商型号品牌批号封装库存备注价格
PHI
04+
SOP-16
1378
全新原装绝对自己公司现货
询价
PHI
23+
SOP
3600
绝对全新原装!现货!特价!请放心订购!
询价
PHIL
24+
SOP-16
262
询价
NE
100
原装现货,价格优惠
询价
PHI
24+
SOP16
300
原装现货假一罚十
询价
PHI
23+
SSOP
6500
全新原装假一赔十
询价
恩XP
18+
SOP16
85600
保证进口原装可开17%增值税发票
询价
PHI
05+
100
原装正品
询价
恩XP
21+
SOP16
20000
百域芯优势 实单必成 可开13点增值税发票
询价
PHI
23+
TSSOP16
50000
全新原装正品现货,支持订货
询价
更多NE552供应商 更新时间2026-3-14 10:32:00