NE5520379A-T1A-A分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

NE5520379A-T1A-A属于分立半导体产品的晶体管-FETMOSFET-射频。由California Eastern Labs制造生产的NE5520379A-T1A-A晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

DESCRIPTION

NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

• HIGH OUTPUT POWER: +35.5 dBm TYP

• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

• HIGH POWER ADDED EFFICIENCY: 65 TYP @ VDS = 3.2 V, f = 915 MHz

• SINGLE SUPPLY: 2.8 to 6.0 V

• CLASS AB OPERATION

• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

APPLICATIONS

• DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets

• OTHERS:

Two-Way Pagers

Retail Business Radio

Special Mobile Radio

Short Range Wireless