NE3515S02-T1C-A分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

NE3515S02-T1C-A属于分立半导体产品的晶体管-FETMOSFET-射频。由California Eastern Labs制造生产的NE3515S02-T1C-A晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

FEATURES

• Super low noise figure, high associated gain and middle output power

NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)

• Micro-X plastic (S02) package

APPLICATIONS

• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer

• DBS LNB, VSAT

• Other X to Ku-band communication systems