丝印：NCE8290B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =90A RDS(ON)

文件：357.44 Kbytes 页数：7 Pages

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丝印：NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：709.83 Kbytes 页数：8 Pages

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丝印：NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：643.89 Kbytes 页数：7 Pages

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丝印：NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit

文件：616.98 Kbytes 页数：7 Pages

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丝印：NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：692.27 Kbytes 页数：7 Pages

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丝印：NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：619.59 Kbytes 页数：7 Pages

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丝印：NCE82H140；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 82V,ID =140A RDS(ON)

文件：375.16 Kbytes 页数：7 Pages

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丝印：NCE82H140D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS(ON)

文件：354.73 Kbytes 页数：8 Pages

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丝印：NCE82H140LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

文件：386.74 Kbytes 页数：7 Pages

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丝印：NCE82H160；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =160A RDS(ON)

文件：323.01 Kbytes 页数：7 Pages

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