丝印：NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：619.59 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：619.59 Kbytes 页数：7 Pages

NCEPOWER

新洁能