NCEP026N10T芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCEP026N10T	文件：330.55 Kbytes Page：6 Pages	丝印：NCEP026N10T；Package：TO-247；NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal 文件：330.55 Kbytes 页数：6 Pages	NCEPOWER 新洁能	NCEPOWER
NCEP026N10T	文件：330.55 Kbytes Page：6 Pages	丝印：NCEP026N10T；Package：TO-247；NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal 文件：330.55 Kbytes 页数：6 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCEP026N10T供应商更新时间2025-9-13 18:30:00