丝印：NCEP40T11；Package：TO-220-3L；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

文件：347.9 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：NCEP40T11AK；Package：TO-252-2L；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：1.12859 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCEP40T11G；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

文件：853.7 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：NCEP40T11；Package：TO-220-3L；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

文件：347.9 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：NCEP40T11AK；Package：TO-252-2L；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：1.12859 Mbytes 页数：7 Pages

NCEPOWER

新洁能