丝印：NCP302155A；Package：PQFN；Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supp

文件：779 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

丝印：NCP302155A；Package：PQFN；Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supp

文件：779 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Option for Zero Cross Detection with 3−level PWM • Internal Bootstrap Diode • Undervoltage Lockout • Supp

文件：779 Kbytes 页数：19 Pages

ONSEMI

安森美半导体