丝印：NCP302155R；Package：PQFN31；Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Peak Currents up to 80 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Internal Bootstrap Diode • Undervoltage Lockout • Supports Intel® P

文件：950.68 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：NCP302155R；Package：PQFN31；Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Peak Currents up to 80 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Internal Bootstrap Diode • Undervoltage Lockout • Supports Intel® P

文件：950.68 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Integrated Driver and MOSFET

Features • Capable of Average Currents up to 55 A • Capable of Peak Currents up to 80 A • Capable of Switching at Frequencies up to 2 MHz • Compatible with 3.3 V or 5 V PWM Input • Responds Properly to 3−level PWM Inputs • Internal Bootstrap Diode • Undervoltage Lockout • Supports Intel® P

文件：950.68 Kbytes 页数：16 Pages

ONSEMI

安森美半导体