丝印：NCE80T560D；Package：TO-263；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

文件：618.44 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80T560F；Package：TO-220F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

文件：618.44 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80T560F；Package：TO-220F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

文件：618.45 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80T560F；Package：TO-220F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

文件：618.45 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80TC65BT；Package：TO-247；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.45423 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE80TD60BP；Package：TO-3P；600V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.42824 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：NCE80TD60BT；Package：TO-247；600V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.46923 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80TD65BP；Package：TO-3P；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.54703 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE80TD65BT；Package：TO-247；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.66021 Mbytes 页数：12 Pages

NCEPOWER

新洁能

丝印：NCE80TD65BT4；Package：TO-247-4L；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.59668 Mbytes 页数：10 Pages

NCEPOWER

新洁能