NCE N-Channel Enhancement Mode Power MOSFET

文件：358.22 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE8651Q；Package：DFN3x3；N-Channel Enhancement Mode Power MOSFET

文件：355.62 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

文件：337.12 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE80T420F；Package：TO-220F；N-Channel Super Junction Power MOSFET

文件：646.26 Kbytes 页数：7 Pages

FS

丝印：NCE80T420；Package：TO-220；N-Channel Super Junction Power MOSFET

文件：646.26 Kbytes 页数：7 Pages

FS

N沟道 MOSFET

\n The NCE8050A uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ES;

NCEPower

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N沟道 MOSFET

\n The NCE8050AK uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ES;

NCEPower

新洁能

N沟道 MOSFET

NCEPower

新洁能