N沟道 MOSFET

\n The NCE8050A uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ES;

NCEPower

新洁能

N沟道 MOSFET

\n The NCE8050AK uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ES;

NCEPower

新洁能

Silicon NPN Triple Diffuse High Voltage Transistor

Features  Silicon NPN Triple diffuse type  Excellent DC current gain characteristics  Low Saturation Voltage  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：293.84 Kbytes 页数：5 Pages

PANJIT

強茂

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

文件：349.74 Kbytes 页数：10 Pages

Fairchild

仙童半导体

10/100 BASE-T QUAD SMD TRANSFOMER MODULES

文件：40.59 Kbytes 页数：1 Pages

PMI