丝印：NCE8290B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =90A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE8290B uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. \n• V DS =82V,I D =90A\nR DS(ON) < 8.8 m? @ V GS =10V (Typ:7.5m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Special designed for convertors and power controls\n• Good stability and uniformity with high E AS\n• Excellent package for good h;

NCEPower

新洁能

3A, 23V, 340kHz Synchronous Step-Down Converter

文件：210.55 Kbytes 页数：12 Pages

RICHTEK

立锜科技

CAPACITY 2 x 1.0mm² or 2 x 1.5mm²

TERMINAL CAPACITY 2 x 1.0mm² or 2 x 1.5mm²

文件：194.75 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

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CLARE

Clare, Inc.