丝印：NCE82H140D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS(ON)

文件：354.73 Kbytes 页数：8 Pages

NCEPOWER

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12-200V N-Channel Trench MOSFET

The NCE82H140D usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications. • VDS= 82V,ID =140ARDS(ON) < 5.2mΩ@ VGS=10V  (Typ:4.3mΩ)• Specialprocess technology for high ESD capability• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation;

NCEPower

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

文件：386.74 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 82V,ID =140A RDS(ON)

文件：375.16 Kbytes 页数：7 Pages

NCEPOWER

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