丝印：0102B；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0102B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 1.8A RDS(ON)

文件：351.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

SENSITIVE GATE SCR

文件：196.2 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

0.8A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Availa

文件：177.62 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

0.8A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Availa

文件：177.62 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体