12-200V N-Channel Trench MOSFET

The NCE0140IA usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications. • VDS= 100V,ID =40ARDS(ON) < 17mΩ@ VGS=10V  (Typ:12mΩ)• Specialprocess technology for high ESD capability• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：350.23 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Schottky Barrier Diode

文件：44.21 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

文件：44.21 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE

MOS FET Power Amplifier Module for GSM Handy Phone

文件：246.37 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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