丝印：NCE01P03S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-3A RDS(ON)

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NCEPOWER

新洁能

12-150V P-Channel Trench MOSFET

\n The NCE01P03S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. It is ESD protested. \n• V DS =-100V,I D =-3A\nR DS(ON) <200m? @ V GS =-10V (Typ:170m?)\nR DS(ON) <230m? @ V GS =-4.5V (Typ:200m?)\n• Super high dense cell design\n• Advanced trench process technology\n• Reliable and rugged\n• High density celldesign for ultra low on-resistance;

NCEPower

新洁能

TO-252

NCE/新洁能

上传：深圳庞田科技有限公司

TO-220-3L

NCE/新洁能

上传：深圳市科鑫锐电子科技有限公司

TO-252

NCE新洁能

上传：深圳市华康联电子科技有限公司