NCE N-Channel Enhancement Mode Power MOSFET

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丝印：NCE0157A2D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0157A2D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =57A RDS(ON)

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NCEPOWER

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丝印：NCE0157AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =57A RDS(ON)

文件：441.56 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCEPower

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12-200V N-Channel Trench MOSFET

\n The NCE0157AK uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 100V,I D =57A\nR DS(ON) < 16m? @ V GS =10V (Typ:12m?)\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good he;

NCEPower

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12-200V N-Channel Trench MOSFET

NCEPower

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