NCE N-Channel Enhancement Mode Power MOSFET

文件：383.51 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 100-V (D-S) MOSFET

文件：977.47 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：NCE0106R；Package：SOT-223-3L；LCE N-Channel Enhancement Mode Power MOSFET

文件：929.84 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE0106R；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

文件：930.48 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

12-200V N-Channel Trench MOSFET

\n The NCE0106R uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 100V,I D = 6A\nR DS(ON) < 140m? @ V GS =10V (Typ:110m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Excellent package for good heat dissipation;

NCEPower

新洁能