丝印：0103M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON)

文件：335.42 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

The NCE0103M uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. • V DS = 100V,I D = 3AR DS(ON) <160m? @ V GS =10V (Typ:136m?)R DS(ON) <170m? @ V GS =4.5V (Typ:140m?)• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Excellent package for good heat dissipation;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON)

文件：338.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

SMD 0805, Glass Protected NTC Thermistors

FEATURES • TCR ranging from -6 %/K at -40 °C to -2 %/K at 150 °C • Tolerance on R25 down to 1 %, and on B25/85 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected • cULus recognized, file E148885 (UL category XGPU2 / X

文件：121.8 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

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